The effective density of induced interface states of ionized cluster beam deposited Ag/n-Si Schottky junctions

Vacuum

Volumn 61, Issue 2-4, 2001, Pages 355-359

  Cvikl, B ^a,b   Korosak D ^a  

^a UNIVERSITY OF MARIBOR   (Slovenia)

^b JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; CAPACITANCE; DENSITY (SPECIFIC GRAVITY); ELECTRIC CHARGE; ELECTRIC POTENTIAL; ENERGY GAP; INTERFACES (MATERIALS); ION BEAM ASSISTED DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SILVER;

IONIZED CLUSTER BEAM (ICB) DEPOSITION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0035858439     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00281-0     Document Type: Conference Paper

References (13)

1. Drummond TJ. Phys Rev B 1999;59:8182 and references therein.
2. Hasegawa H. Jpn J Appl Phys 1999;38:1098 and references therein.
3. Takagi T. Ionized cluster beam deposition and epitaxy. Park Ridge, NJ, USA: Noyes Publications, 1988 (see for instance Fig. 3.13, p. 46).
4. Brown WL, Jarrold MF, McEachern RL, Sosnowski M, Takaoka G, Usui H, Yamada I. Nucl Instr and Meth 1991;B59:182.
5. McEachern RL, Brown WL, Jarrold MF, Sosnowski M, Takaoka G, Usui H, Yamada I. Vac Sci Technol 1991;A9:3105.
6. Cvikl B, Korošak D, to be published.
7. Raychaudhuri B, Chattopadhyay P. Phys Status Solidi A 1993;141:K71.
8. Cvikl B, Korošak D, Horvath ZsJ. Vacuum 1998;50:385.
9. Werner J, Ploog K, Queisser HJ. Phys Rev Lett 1986;57:1080.
10. Werner J, Levi AF, Tung RT, Anzlowar M, Pinto M. Phys Rev Lett 1988;60:53.
11. Gomila G. J Phys D: Appl Phys 1999;32:64.
12. Korošak D, Cvikl B. Vaccum 2001;61:349-53.
13. Korošak D, Cvikl B. Inf MIDEM (J Microelectronics, Electronic Components and Materials) 2000;30:89.