Capacitance-voltage characteristics of selectively doped AlxGa1 - XAs/GaAs heterostructures containing deep traps

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 532-536

  Prokhorov, Eugenio F ^a   Gorev, Nikolai B ^b   Kodzhespirova, Inna F ^b   Kovalenko, Yury A ^b  

^a UNIVERSIDAD AUTÓNOMA DE QUERÉTARO   (Mexico)

^b INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; DIFFERENTIAL EQUATIONS; ELECTRIC POTENTIAL; INTEGRAL EQUATIONS; INTERFACES (MATERIALS); PERMITTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; STATISTICS;

EHRENBERG APPROXIMATION; FERMI INTEGRAL; FERMI-DIRAC STATISTICS; SELECTIVELY DOPED HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0032606472     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370762     Document Type: Article

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