Temperature dependent electrical characteristics of silicide/silicon junctions

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2000, Pages 39-42

  Horvath Zs J ^a   Donoval, D ^b   Peto, G ^a   Molnar G ^a   Van Tuyen, Vo ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSYSTEMS; SEMICONDUCTOR DEVICES; SILICIDES; THERMIONIC EMISSION;

ELECTRICAL CHARACTERISTIC; I-V MEASUREMENTS; IDEALITY FACTORS; LATERAL INHOMOGENEITY; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; THERMIONIC EMISSION THEORY; THERMIONIC FIELD EMISSION;

SEMICONDUCTOR JUNCTIONS;

EID: 84951974158     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2000.889448     Document Type: Conference Paper

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