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Volumn 190, Issue 1-4, 2002, Pages 498-507

Low-energy electron-excited nanoluminescence studies of GaN and related materials

(12) Brillson, L J a,b Bradley, S T b Goss, S H a Sun, X a Murphy, M J c Schaff, W J c Eastman, L F c Look, D C d Molnar, R J e Ponce, F A f Ikeo, N g Sakai, Y g

a The Ohio State University (United States)

b OHIO STATE UNIVERSITY (United States)

c School of Operations Research and Industrial Engineering (United States)

d WRIGHT STATE UNIVERSITY (United States)

e MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

f ARIZONA STATE UNIVERSITY (United States)

g JEOL LTD (Japan)

Author keywords

Al2O3; AlGaN; Defects; GaN; Heterojunctions; InGaN; L uminescence spectroscopy; Semiconductor interfaces

Indexed keywords

CHEMICAL BONDS; COMPOSITION; ELECTRONS; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); LUMINESCENCE; MULTILAYERS; NANOSTRUCTURED MATERIALS; OPTIMIZATION; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; ULTRAHIGH VACUUM; ULTRATHIN FILMS;

NANOLUMINESCENCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037042009 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00925-4 Document Type: Article

Times cited : (4)

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