Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 2, 2001, Pages 681-685

  Xu, S J ^a   Or, C T ^a   Li, Q ^a   Zheng, L X ^a   Xie, M H ^a   Tong, Y ^a   Yang, Hui ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012105938     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<681::AID-PSSA681>3.0.CO;2-7     Document Type: Article

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