Metal-organic chemical vapor deposition of NbxTa(1-x)NyOmCn films as diffusion barriers for Cu metallization

Thin Solid Films

Volumn 420-421, Issue , 2002, Pages 548-552

  Gau, W C ^a   Wu, C W ^a   Chang, T C ^b   Liu, P T ^c   Chu, C J ^d   Chen, C H ^d   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c Hsinchu Science Park   (Taiwan)

^d Nanmat Technology Co Ltd   (Taiwan)

Author keywords

Chemical vapor deposition; Cu metallization; Diffusion barrier; Nb; Nitride; Ta

Indexed keywords

ACTIVATION ENERGY; AMMONIA; AMORPHOUS FILMS; COPPER; DIFFUSION; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NIOBIUM COMPOUNDS; NITRIDES; THERMAL EFFECTS;

DIFFUSION BARRIER;

THIN FILMS;

EID: 0037011143     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00853-2     Document Type: Conference Paper

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