The effect of sulfur passivation and rapid thermal annealing on the properties of InAs MOS structures with the oxide layer deposited by reactive sputtering

Physica Status Solidi (A) Applied Research

Volumn 161, Issue 2, 1997, Pages 571-576

  Eftekhari, G ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LEAKAGE CURRENTS; PASSIVATION; PYROLYSIS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SPUTTER DEPOSITION; SULFUR; THERMAL EFFECTS;

INDIUM ARSENIDE;

MOS DEVICES;

EID: 0031167441     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199706)161:2<571::AID-PSSA571>3.0.CO;2-P     Document Type: Article

References (16)

1. W. DOBBELAERE, W. DERAEDT, J. DEBOECK, R. MERTENS, and G. BORGHS, Electronics Lett. 28, 372 (1992).
2. W. DOBBELAERE, J. DEBOECK, P. HEREMANS, R. MERTENS, G. BORGHS, W. LAYTEN, and J. VAN LANDUYT, Appl. Phys. Lett. 60, 868 (1992).
3. C. H. KUAN, R.-M. LIN, S.-F. TANG, and T.-P. SUN, J. Appl. Phys. 80, 5454 (1996).
4. A. CAPPY, B. CARNEZ, R. FAUGUEMERGUES, G. SALMER, and E. CONSTANT, IEEE Trans. Electron Devices 27, 2158 (1980).
5. D. A. BAGLEE, D. K. FERRY, C. W. WILMSEN, and H. H. WIEDER, J. Vac. Sci. Technol. 17, 1032 (1980).
6. B. T. MOORE and D. K. FERRY, J. Vac. Sci. Technol. 17, 1037 (1980).
7. D. M. LAUGHLIN and C. W. WILMSEN, Thin Solid Films 70, 333 (1980).
8. R. J. SCHWARTZ, R. C. DOCKERTY, and H. W. THOMPSON, JR., Solid State Electronics 14, 115 (1971).
9. H. OIGAWA, J.-F. FAN, Y. NANNICHI, H. SUGAHARA, and M. OSHIMA, Jpn. J. Appl. Phys. 30, L322 (1991).
10. R. B. FAIR (Ed.), Rapid Thermal Processing, Academic Press, San Diego 1993.
11. S. SUYAMA, A. OKAMOTO, T. SERIKAWA, and H. TANIGAWA, J. Appl. Phys. 62, 2360 (1987).
12. G. EFTEKHARI, phys. stat. sol. (a) 151, 129 (1995).
13. G. EFTEKHARI, Semicond. Sci. Technol. 6, 193 (1991).
14. K. C. KAO and W. H. WANG, Electrical Transport in Solids, Pergamon Press, Oxford 1981.
15. S. M. SZE, Physics of Semiconductor Devices, 2nd ed., Wiley, New York 1981 (pp. 366 to 369).
16. T. KIKAWA, S. TAKATANI, and Y. TEZEN, Appl. Phys. Lett. 60, 2785 (1992).