The influence of rapid thermal annealing and sulfur passivation on the electrical characteristics of anodically grown InSb MOS structures

Thin Solid Films

Volumn 278, Issue 1-2, 1996, Pages 150-154

  Eftekhari, G ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Annealing; Anodic oxidation; Indium antimonide; Metal oxide semiconductor structure

Indexed keywords

ANNEALING; ANODIC OXIDATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ENERGY GAP; PASSIVATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

CURRENT CONDUCTION; INDIUM ANTIMONIDE; OXIDE FIXED CHARGES; SULFUR PASSIVATION;

MOS DEVICES;

EID: 0030142530     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08190-9     Document Type: Article

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