Thermal stability of Indium Tin Oxide/n-GaAs heterostructures with and without sulfur passivation

Physica Status Solidi (A) Applied Research

Volumn 178, Issue 2, 2000, Pages 709-714

  Eftekhari, G ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; EVAPORATION; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SULFUR; THERMODYNAMIC STABILITY;

INDIUM TIN OXIDE;

HETEROJUNCTIONS;

EID: 0033752573     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200004)178:2<709::AID-PSSA709>3.0.CO;2-8     Document Type: Article

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