Effects of sulfur passivation of GaSb on the thermal stability of Al/n-GaSb contacts

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 PART A, 1996, Pages 564-567

  Eftekhari, Ghader ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

GaSb; Passivation; Rapid thermal annealing; Schottky barrier; Thermal stability

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); PASSIVATION; SCHOTTKY BARRIER DIODES; SULFUR; THERMODYNAMIC STABILITY;

CAPACITANCE VOLTAGE MEASUREMENT; GALLIUM ANTIMONY; METAL EVAPORATION; SCHOTTKY CONTACTS; SULFUR PASSIVATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030084008     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.564     Document Type: Article

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