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Vacuum

Volumn 67, Issue 1, 2002, Pages 101-113

Tuning Schottky barrier heights by organic modification of metal-semiconductor contacts

(3) Zahn, Dietrich R T a Park, Sunggook a Kampen, Thorsten U a

a CHEMNITZ UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

Metal semiconductor contacts; Organic layer modifications; Schottky barriers

Indexed keywords

ADSORPTION; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; PASSIVATION; PLASMA THEORY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

METAL-SEMICONDUCTOR (MS) CONTACTS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 0037009148 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/S0042-207X(02)00185-9 Document Type: Conference Paper

Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.