New structure of In-based ohmic contacts to n-type GaAs

Applied Physics A: Materials Science and Processing

Volumn 62, Issue 3, 1996, Pages 241-245

  Ding, S A ^a   Hsu, C C ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; MICROSTRUCTURE; OHMIC CONTACTS; PHASE COMPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTERING;

INDIUM COMPOUNDS;

EID: 0030109454     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050292     Document Type: Article

References (12)