Growth of organic films on passivated semiconductor surfaces: Gallium arsenide versus silicon

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 326-331

  Kampen, T U ^a   Salvan, G ^a   Tenne, D ^a   Scholz, R ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Gallium arsenide; Passivation; PTCDA; Raman spectroscpy; Silicon; Vibrations

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; LIGHT POLARIZATION; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; MOLECULAR VIBRATIONS; PASSIVATION; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING FILMS;

EID: 18144432832     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00136-2     Document Type: Article

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