GaAs surface passivation by ultra-high vacuum deposition of chalcogen atoms

Vacuum

Volumn 57, Issue 2, 2000, Pages 139-144

  Zahn, Dietrich R T ^a   Kampen, Thorsten U ^a   Hohenecker, Stefan ^a   Braun, Walter ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; LOW ENERGY ELECTRON DIFFRACTION; PASSIVATION; SELENIUM; SEMICONDUCTING GALLIUM ARSENIDE; SULFUR; SYNCHROTRON RADIATION; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND BENDING; CHALCOGEN ATOMS; SURFACE PASSIVATION; X RAY PHOTOEMISSION SPECTROSCOPY;

SURFACE TREATMENT;

EID: 0034187953     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00122-6     Document Type: Article

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