Passivation of Si(111)‐7×7 by a C60 monolayer

Applied Physics Letters

Volumn 69, Issue 4, 1996, Pages 506-508

  Dunn, A W ^a   Moriarty, P ^a   Upward, M D ^a   Beton, P H ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85024779884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117768     Document Type: Article

References (19)

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