Mechanical strength of 300 mm diameter silicon wafers at high temperatures: modeling and simulation

Microelectronic Engineering

Volumn 45, Issue 2, 1999, Pages 209-223

  Fischer, A ^a   Grabolla, Th ^a   Richter, H ^a   Obermeier, G ^b   Krottenthaler, P ^b   Wahlich, R ^b  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); GRAVITATIONAL EFFECTS; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE TESTING; INTEGRATED CIRCUIT MANUFACTURE; MATHEMATICAL MODELS; PLASTIC DEFORMATION; STRAIN MEASUREMENT; STRENGTH OF MATERIALS; THERMAL STRESS;

FORCE BALANCE MODEL; LARGE SILICON WAFER; SLIP DISLOCATION; SLIP FREE WAFER PROCESS;

SILICON WAFERS;

EID: 0032590891     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00155-0     Document Type: Article

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