Explaining the dependences of electron and hole mobilities in Si MOSFET's inversion layer

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 527-530

  Pirovano, Agostino ^a   Lacaita, Andrea L ^a   Zandler, Gunther ^a   Oberhuber, Ralph ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LOW TEMPERATURE EFFECTS; MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTING SILICON; STATISTICAL METHODS; SURFACE ROUGHNESS;

AUTOCOVARIANCE FUNCTIONS; INVERSION LAYER; POWER SPECTRAL DENSITY;

CARRIER MOBILITY;

EID: 0033352175     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)