Diffusion behavior of ion-implanted n-type dopants in silicon germanium

Materials Research Society Symposium - Proceedings

Volumn 686, Issue , 2002, Pages 33-38

  Eguchi, S ^a   Leitz, C W ^a   Fitzgerald, E A ^a   Hoyt, J L ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; DIFFUSION IN SOLIDS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; OPTIMIZATION; PHOSPHORUS; SEMICONDUCTOR DOPING;

TRANSIENT RETARDATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036343941     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)