Channel engineering of SiGe-based heterostructures for high mobility MOSFETs

Materials Research Society Symposium - Proceedings

Volumn 686, Issue , 2002, Pages 113-118

  Leitz, Christopher W ^a   Currie, Matthew T ^a   Lee, Minjoo L ^a   Cheng, Zhi Yuan ^a   Antoniadis, Dimitri A ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; CMOS INTEGRATED CIRCUITS; COMPOSITION; ELECTRON MOBILITY; HOLE MOBILITY; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STRAIN; SUBSTRATES; TENSILE STRESS;

DUAL CHANNEL HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0036346910     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)