Defects in microcrystalline silicon prepared with hot wire CVD

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 123-124

  Finger, F ^a   Klein, S ^a   Dylla, T ^a   Baia Neto, A L ^a,b   Vetterl, O ^a   Carius, R ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b FEDERAL RURAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; DESORPTION; ELECTRON TRAPS; ELECTRONIC PROPERTIES; ETCHING; FILM PREPARATION; GRAIN BOUNDARIES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TEMPERATURE;

ELECTRIC FIELD DISTRIBUTIONS; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGEN DILUTION; MICROCRYSTALLINE SILICON; THERMAL DESORPTION; TRAPPING CENTERS;

SILICON;

EID: 0036914147     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-715-a16.3     Document Type: Conference Paper

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