Growth and structure of microcrystalline silicon prepared with glow discharge at various plasma excitation frequencies

Materials Research Society Symposium - Proceedings

Volumn 452, Issue , 1997, Pages 725-736

  Finger, F ^a   Carius, R ^a   Hapke, P ^a   Houben, L ^a   Luysberg, M ^a   Tzolov, M ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ETCHING; GLOW DISCHARGES; GRAIN SIZE AND SHAPE; MIXTURES; MODELS; NUCLEATION; PLASMAS; TRANSMISSION ELECTRON MICROSCOPY; VOLUME FRACTION;

MICROCRYSTALLINE SILICON; PLASMA EXCITATION FREQUENCY;

SILICON;

EID: 0030674881     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (46)