Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 225, Issue 1, 2001, Pages 45-49

  Fu, Yi ^a   Yang, Hui ^a   Zhao, D G ^a   Zheng, X H ^a   Li, S F ^a   Sun, Y P ^a   Feng, Z H ^a   Wang, Y T ^a   Duan, L H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Photoluminescence; A1. SEM; A3. Epitaxial lateral overgrowth; A3. Metalorganic chemical vapor deposition; B2. Cubic GaN

Indexed keywords

CRYSTAL ORIENTATION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SILICA;

EPITAXIAL LATERAL OVERGROWTH (ELO);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035339128     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01029-6     Document Type: Article

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