Electroless nickel ternary alloy deposition on SiO2 for application to diffusion barrier layer in copper interconnect technology

Journal of the Electrochemical Society

Volumn 149, Issue 11, 2002, Pages

  Osaka, Tetsuya ^a   Takano, Nao ^a   Kurokawa, Tetsuya ^a   Kaneko, Tomomi ^a   Ueno, Kazuyoshi ^b  

^a WASEDA UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; COPPER; DIELECTRIC PROPERTIES; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTROLESS PLATING; MELTING; REFRACTORY METALS; SCANNING ELECTRON MICROSCOPY; SILICA; THERMODYNAMIC STABILITY;

COPPER INTERCONNECT TECHNOLOGY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; NICKEL TERNARY ALLOYS; SHEET RESISTANCE;

NICKEL ALLOYS;

EID: 0036863636     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1512669     Document Type: Article

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