AlGaAs/GaAs tunnel diode integrated with nanometer-scale atomic force microscope tip-induced oxides

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 2 B, 1999, Pages

  Okada, Yoshitaka ^a   Iuchi, Yoshimasa ^a   Kawabe, Mitsuo ^a   Harris Jr , James S ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; HETEROJUNCTIONS; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ALUMINUM GALLIUM ARSENIDE; COULOMB BLOCKADE;

TUNNEL DIODES;

EID: 0032674758     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.L160     Document Type: Article

References (18)