Nanoscale oxidation of GaAs-based semiconductors using atomic force microscope

Journal of Applied Physics

Volumn 83, Issue 4, 1998, Pages 1844-1847

  Okada, Yoshitaka ^a   Amano, Shinji ^a   Kawabe, Mitsuo ^a   Shimbo, Barden N ^b   Harris Jr , James S ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC EQUIPMENT; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; OXIDATION; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SURFACES; TRANSISTORS;

NANOSCALE OXIDATION; SINGLE ELECTRON TUNNELING TRANSISTORS;

ATOMIC FORCE MICROSCOPY;

EID: 0031998498     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366907     Document Type: Article

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