Optical properties of GaN thin films on sapphire substrates characterized by variable-angle spectroscopic ellipsometry

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 10 PART A, 1998, Pages

  Yang, Tao ^a   Goto, Shigeo ^a   Kawata, Masahiko ^a   Uchida, Kenji ^a   Niwa, Atsuko ^a   Gotoh, Jun ^a  

^a HITACHI LTD   (Japan)

Author keywords

Bandgap energy; Blue laser diode; Cauchy model; Dielectric constant; GaN; Parametric semiconductor model; Refractive index; Spectroscopic ellipsometry

Indexed keywords

BAND STRUCTURE; ELLIPSOMETRY; FILM GROWTH; LIGHT TRANSMISSION; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PERMITTIVITY; REFRACTIVE INDEX; SAPPHIRE; SEMICONDUCTOR DEVICE MODELS; SURFACE ROUGHNESS; THIN FILMS;

BANDGAP ENERGY; BLUE LASER DIODE; CAUCHY MODEL; KRAMERS-KRONIG CORRECT; PARAMETRIC SEMICONDUCTOR MODEL; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032180057     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1105     Document Type: Article

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