Ultra thin high quality Ta2O5 gate dielectrics prepared by in-situ rapid thermal processing

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 385-390

  Luan, H F ^a   Lee, S J ^a   Lee, C H ^a   Mao, A Y ^a   Vrtis, R ^a   Roberts, D ^a   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; FILM PREPARATION; GATES (TRANSISTOR); IN SITU PROCESSING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; RAPID THERMAL ANNEALING; RELIABILITY; SILICA; TANTALUM COMPOUNDS;

DIFFUSION BARRIER; RAPID THERMAL PROCESSING; TANTALUM PENTOXIDE;

ULTRATHIN FILMS;

EID: 0033319178     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-385     Document Type: Conference Paper

References (6)

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