Electrical characterization of al2o3 - sio2mos structures

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 451-456

  Ragnarsson, L A ^a   Aderstedt, E ^a   Lundgren, P ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; METALLIZING; OXIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMOOXIDATION; ULTRATHIN FILMS;

ALUMINUM OXIDE; CAPACITANCE VOLTAGE METHOD; THICKNESS REDUCTION;

MOS DEVICES;

EID: 0033322774     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-451     Document Type: Article

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