6H-SiC schottky diode edge terminated using amorphous SiC by sputtering method

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 925-928

  Matsumoto, K ^a   Chen, Y ^a   Kuzmik, J ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Edge Termination; Reactive Ion Etching; Schottky; Sputtering

Indexed keywords

AMORPHOUS MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SPUTTER DEPOSITION; VOLTAGE MEASUREMENT;

AMORPHOUS SILICON CARBIDE; EDGE TERMINATIONS;

SCHOTTKY BARRIER DIODES;

EID: 0031649910     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.925     Document Type: Article

References (4)

1. A. Itoh, T. Kimoto and H. Matsunami, 1996 Inst. Phys. Conf. 142 689
2. J. N. Su and A. J. Steckl, 1996 Inst. Phys. Conf. 142 697
3. D. Alok, B. J. Baliga and P. K. McLarty, 1994 IEEE EDL. 15 394
4. M. Bhatnagar and B.J. Baliga, 1993 IEEE Trans. Electron Devices. 40 645 E-mail address : nishino@ipc.kit.ac.jp