Characterization Shottky barriers occurring at the metal-6H-SiC contact based on results of studies of current-voltage characteristics

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 379-382

  Strel'chuk, Anatoly M ^a   Rastegaeva, Marina G ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Annealing; Current voltage characteristics; Schottky diodes

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; SILICON CARBIDE; SINGLE CRYSTALS; SURFACE TREATMENT;

CONTACT PRESSURE;

SCHOTTKY BARRIER DIODES;

EID: 0000381328     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)02010-7     Document Type: Article

References (5)

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2. J.R. Waldrop and R.W. Grant, Appl. Phys. Lett., 62 (1993) 2685.
3. A.N. Andreev et al, Semiconductor, 29 (1995) 957.
4. S.R. Smith et al, J. Appl. Phys., 79 (1996) 301.
5. E.H. Rhoderick, Metal-Semiconductor contacts, Moscow, 1982. [in Russian].