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Solid-State Electronics

Volumn 46, Issue 10, 2002, Pages 1485-1493

Simulation and design of SiGe HBTs for power amplification at 10 GHz

(3) Todorova, D a Mathur, N a Roenker, K P a

a 705 Engineering Research Center (United States)

Author keywords

Base out diffusion; Bipolar transistor; Device modeling; Power gain; Silicon germanium

Indexed keywords

BAND STRUCTURE; BORON; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; POWER AMPLIFIERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

DEVICE MODELING; POWER GAIN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036779113 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(02)00093-X Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.