An X-Band high-power amplifier using SiGe/Si HBT and lumped passive components

IEEE Microwave and Wireless Components Letters

Volumn 11, Issue 7, 2001, Pages 287-289

  Ma, Zhenqiang ^a,b   Mohammadi, Saeed ^a,b   Lu, Liang Hung ^b   Bhattacharya, Pallab ^a,b   Katehi, Linda P B ^a,b   Alterovitz, Samuel A ^a,c   Ponchak, George E ^a,c  

^a IEEE   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Lumped passives; MMIC power amplifier; SiGe Si HBT

Indexed keywords

LUMPED PASSIVE COMPONENTS;

CAPACITORS; ELECTRIC INDUCTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS;

POWER AMPLIFIERS;

EID: 0035401657     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/7260.933773     Document Type: Article

References (6)

1. max
2. T SiGe HBT technology
3. Class-A SiGe HBT power amplifiers at C-band frequencies
4. A high power and high gain X-band Si/SiGe/Si heterojunction bipolar transistor
5. X- and Ku-band amplifiers based on Si/SiGe HBTs and micromachined lumped components
6. Small- and large-signal operation of X-band CE and CB SiGe/Si power HBTs