Low frequency conductance voltage analysis of Si/GexSi1-x/Si heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 47, Issue 1, 2000, Pages 187-196

  Neugroschel, Arnost ^a   Li, Guoxin ^a   Sah, Chih Tang ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIFFUSION; ELECTRIC CONDUCTANCE; ELECTRIC FIELD MEASUREMENT; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; TRANSIT TIME DEVICES;

CURRENT GAIN; DIFFUSION LENGTH; EMITTER INJECTION EFFICIENCY; LOW FREQUENCY CONDUCTANCE VOLTAGE; TRANSIT TIME;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033882892     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.817585     Document Type: Article

References (43)