Power performance of X-band Si-Si0.75Ge0.25-Si HBTs

2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001

Volumn , Issue , 2001, Pages 170-176

  Ma, Zhenqiang ^a   Mohammadi, Saeed ^a   Bhattacharya, Pallab ^a   Katehi, Linda P B ^a   Alterovitz, Samuel A ^b   Ponchak, George E ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

CMOS technology; FETs; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Millimeter wave technology; Power amplifiers; Power generation; Radio frequency; Silicon germanium

Indexed keywords

AMPLIFIERS (ELECTRONIC); BICMOS TECHNOLOGY; CMOS INTEGRATED CIRCUITS; GERMANIUM; GERMANIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INTEGRATED CIRCUITS; MILLIMETER WAVES; MONOLITHIC INTEGRATED CIRCUITS; POWER AMPLIFIERS; POWER GENERATION; SILICON; SILICON ALLOYS;

CMOS TECHNOLOGY; FETS; GERMANIUM SILICON ALLOY; LINEARITY; MILLIMETER-WAVE TECHNOLOGY; RADIO FREQUENCIES; SILICON GERMANIUM;

C (PROGRAMMING LANGUAGE);

EID: 84951981647     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2001.942361     Document Type: Conference Paper

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