Influence of plasma edge damage on erase characteristics of NOR flash EEPROM using channel erase method

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 354-358

  Lee, Dong Kyu ^a   Lee, Wook H ^a   Na, Young Ho ^a   Kim, Keon Soo ^a   Ahn, Kun Ok ^a   Suh, Kang Deog ^a   Roh, Yonghan ^b  

^a SAMSUNG Electronics   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Channel erase; Erase characteristics; Flash EEPROM; Plasma edge damage; Scaling down

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC FIELDS; ELECTRON TUNNELING; LOGIC GATES; PLASMA ETCHING;

PLASMA EDGE DAMAGE;

FLASH MEMORY;

EID: 0036080340     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2002.996659     Document Type: Article

References (12)

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