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Semiconductor Science and Technology
Volumn 17, Issue 9, 2002, Pages 938-941
Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal-oxide semiconductor field-effect transistors
(4)
Kar, G S
a
Maikap, S
b
Banerjee, S K
c
Ray, S K
b
a
INDIAN INSTITUTE OF TECHNOLOGY
(
India
)
b
Seoul National University
(
South Korea
)
c
The University of Texas at Austin
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
CARRIER MOBILITY; ELECTRIC RESISTANCE; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS;
DRAIN RESISTANCE;
HETEROJUNCTIONS;
EID
:
0036715220
PISSN
:
02681242
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1088/0268-1242/17/9/306
Document Type
:
Article
Times cited : (
16
)
References (
16
)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
