NOVEL SiGeC CHANNEL HETEROJUNCTION PMOSFET

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 261-264

  Ray, S K ^a,b   John, S ^a,b   Oswal, S ^a,b   Banerjee, S K ^a,b  

^a The University of Texas at Austin   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MOSFET DEVICES; SEMICONDUCTOR ALLOYS; CARBON; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

CHANNEL HETEROJUNCTIONS; FABRICATION AND CHARACTERIZATIONS; METASTABLES; MOSFETS; P-MOSFETS; PERFORMANCE ENHANCEMENTS; PMOSFET; PMOSFET'S; STRAIN-COMPENSATED; Y CHANNELS;

SI-GE ALLOYS; INTEGRATED CIRCUIT MANUFACTURE;

LOCALIZED VIBRATIONAL MODE; STRAIN COMPENSATION;

EID: 0030415678     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553580     Document Type: Conference Paper

References (5)

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2. J.L.Regolini, F.Gisbert, G.Dollino, and P.Boucaud, “Growth and characterization of strain compensated Si,.,,Ge,Cy layers,” Mater. Lett.,vol. 18, pp. 57-60, 1993.
3. L.D.Lanzerotti, A.St.Amour, C.W.Liu, J.C.Sturm, J.K.Watanabe, and N.D.Thedore, “Si/Si,.,,Ge,C, heterojunction bipolar transistors,” IEEE Electron. Dev. Lett., vol. 17, no. 7, pp. 334-337, 1996.
4. A.St.Amour, C.W.Liu, J.C.Sturm, Y.Lacroix, and M.L.W.Thewalt, “Defect-free band-edge photo-luminescence and bandgap measurement of pseudomorphic Ge,C alloy layers on Si (100): Appl. Phys. Lett., vol. 67, pp. 3915-3517, 1995.
5. S.John, B.Ferguson, E.Quinones, C.B.Mullins and S.Banerjee, “UHVCVD of doped and undoped epitaxial SiGeC films,” Proc. of 38th Electronics Materials Conference, Santa Barbara, June 26-28 1996.