메뉴 건너뛰기
Semiconductor Science and Technology
Volumn 17, Issue 5, 2002, Pages 471-475
Effective mobility and alloy scattering in the strain compensated SiGeC inversion layer
(5)
Kar, G S
a
Maikap, S
a
Ray, S K
a
Banerjee, S K
b
Chakrabarti, N B
a
a
INDIAN INSTITUTE OF TECHNOLOGY
(
India
)
b
The University of Texas at Austin
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
HETEROJUNCTIONS; HOLE MOBILITY; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; STRAIN;
ALLOY SCATTERING;
MOSFET DEVICES;
EID
:
0036566756
PISSN
:
02681242
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1088/0268-1242/17/5/311
Document Type
:
Article
Times cited : (
6
)
References (
19
)
1
0003576769
London: Academic
(1999)
Germanium Silicon: Physics and Materials
Hull, R.
1
Bean, J.C.
2
2
0024752976
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 2043
Iyer, S.S.
1
Patton, G.L.
2
Stork, J.M.C.
3
Meyerson, B.S.
4
Harame, D.L.
5
3
0342853202
(1997)
Semicond, Sci. Technol.
, vol.12
, pp. 1515
Schaffler, T.
1
4
0029386432
(1995)
Semicond. Sci. Technol.
, vol.10
, pp. 1289
Jain, S.C.
1
Osten, H.J.
2
Dietrich, B.
3
Rucker, H.
4
5
0001010184
(1996)
J. Appl. Phys.
, vol.80
, pp. 3043
Liu, C.W.
1
Amour, A.St.
2
Sturm, J.C.
3
Lacroix, Y.R.J.
4
Thewalt, M.L.W.
5
Magee, C.W.
6
Eaglesham, D.
7
6
0029509902
(1995)
Mater. Res. Soc. Symp. Proc.
, vol.379
, pp. 327
Rim, K.
1
Takagi, S.
2
Welser, J.J.
3
Hoyt, J.L.
4
Gibbons, F.
5
7
0035759833
Photonics-2000
(2001)
Proc. SPIE
, vol.4417
, pp. 366
Kar, G.S.
1
Maikap, S.
2
Dhar, A.
3
Ray, S.K.
4
8
84944375335
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 90
Verdonckt-Vandebroek, S.
1
Crabbk, E.F.
2
Meyerson, B.S.
3
Harame, D.L.
4
Restle, P.J.
5
Stork, J.M.C.
6
Johnson, J.B.
7
9
0030415678
(1996)
Tech. Dig. Int. Electron Device Meeting
, vol.43
, pp. 261
Ray, S.K.
1
John, S.
2
Oswal, S.
3
Banerjee, S.K.
4
10
0034272827
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 1715
Quinones, E.J.
1
John, S.
2
Ray, S.K.
3
Banerjee, S.K.
4
11
0032098013
(1998)
J. Phys. D: Appl. Phys.
, vol.31
, pp. 1397
Whall, T.E.
1
Parker, E.H.C.
2
12
0025957008
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 151
Agostinelli, V.M.
1
Shin, H.
2
Tasch, A.F.
3
13
0035334178
(2001)
Solid-State Electron.
, vol.45
, pp. 669
Kar, G.S.
1
Ray, S.K.
2
Kim, T.
3
Banerjee, S.K.
4
Chakrabarti, N.B.
5
14
0001512309
(1997)
J. Appl. Phys.
, vol.82
, pp. 4977
Osten, H.J.
1
Gaworzewski, P.
2
15
0001232635
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 1327
Ahoujja, M.
1
Yeo, Y.K.
2
Hengehold, R.L.
3
Pomrenke, G.S.
4
Look, D.C.
5
Huffman, J.
6
16
0006244846
(1999)
IEEE Trans. Electron Devices
, vol.461
, pp. 749
Mudanai, S.
1
Chindalore, G.L.
2
Shih, W.-K.
3
Wang, H.
4
Ouyang, Q.
5
Tasch, A.F.
6
Maziar, C.M.
7
Banerjee, S.K.
8
17
0020918484
(1983)
IEEE Trans. Electron Devices
, vol.30
, pp. 1629
Schwarz, S.A.
1
Russek, S.E.
2
18
0001138298
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 1393
Li, S.H.
1
Hinckley, J.M.
2
Singh, J.
3
Bhattacharya, P.K.
4
19
0000915188
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 2795
Venkatraman, V.
1
Liu, C.W.
2
Sturm, J.C.
3
* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
