Analytical current-voltage relations for compact SiGe HBT models - Part I: The "Idealized" HBT

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1384-1393

  Friedrich, Martin ^a,b   Rein, Hans Martin ^a,b  

^a IEEE   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Bipolar transistor modeling; Compact HBT model; SiGe heterojunction bipolar transistors

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ERROR ANALYSIS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

HOLE DENSITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032671607     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772480     Document Type: Article

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