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Volumn , Issue , 1999, Pages 54-57
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Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
COMPUTER SIMULATION;
CURRENT DENSITY;
DOPING (ADDITIVES);
ELECTRIC BREAKDOWN;
ELECTRIC CURRENT MEASUREMENT;
ELECTRIC FIELD EFFECTS;
ELECTRIC NETWORK SYNTHESIS;
IMPACT IONIZATION;
MATHEMATICAL MODELS;
THREE DIMENSIONAL;
VOLTAGE MEASUREMENT;
COLLECTOR CURRENT DENSITY;
GUMMEL-POON MODELS;
PINCH IN CONDITION;
SELECTIVELY IMPLANTED COLLECTOR;
SNAP BACK BEHAVIOR;
SOFTWARE PACKAGE DEVICE;
SOFTWARE PACKAGE SPICE;
VERTICAL INSTABILITY;
BIPOLAR TRANSISTORS;
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EID: 0033280554
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (15)
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References (12)
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