Effect of reactive ion etching on amorphous carbon nitride films

Surface and Interface Analysis

Volumn 34, Issue 1, 2002, Pages 728-731

  Jiang, Liudi ^b   Fitzgerald, A G ^a   Rose, M J ^a   Gundlach, A M ^b   Cheung, R ^b  

^a UNIVERSITY OF DUNDEE   (United Kingdom)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Carbon nitride; FTIR; Plasma etching; XPS

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; COMPOSITION EFFECTS; DRY ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAPHITE; ION BOMBARDMENT; MAGNETRON SPUTTERING; REACTIVE ION ETCHING; SPUTTER DEPOSITION; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

POST-TREATMENT; REACTIVE DIRECT CURRENT MAGNETRON SPUTTERING;

CARBON NITRIDE;

EID: 0036694161     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1398     Document Type: Conference Paper

References (16)