High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage

Solid-State Electronics

Volumn 46, Issue 4, 2002, Pages 581-584

  Chang, P C ^a   Monier, C ^a   Baca, A G ^a   Li, N Y ^b   Newman, F ^b   Armour, E ^c   Hou, H Q ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Emcore Photovoltaics   (United States)

^c EMCORE Corporation   (United States)

Author keywords

Heterojunction bipolar devices; High speed characteristics; InGaAsN material system; Turn on voltage

Indexed keywords

BANDWIDTH; ELECTRONS; ENERGY GAP; HETEROJUNCTIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CURRENT GAINS; TURN-ON VOLTAGES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036533106     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00278-7     Document Type: Article

References (8)