Zinc and group V element co-implantation in indium phosphide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 168, Issue 1, 2000, Pages 65-71

  Yu, Kin Man ^a   Ridgway, M C ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; COMPOSITION EFFECTS; CRYSTAL IMPURITIES; DIFFUSION; ELECTRIC POTENTIAL; ION IMPLANTATION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING;

CAPACITANCE-VOLTAGE CHARACTERISTICS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033737677     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00806-X     Document Type: Article

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