Determination of radical densities by optical emission spectroscopy during the ECR plasma deposition of Si-C-N:H films using TMS as a precursor

Plasma Sources Science and Technology

Volumn 11, Issue 3, 2002, Pages 351-359

  Welzel, Th ^a   Dani, I ^a   Richter, F ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ARGON; CARRIER CONCENTRATION; ELECTRONS; HYDROGEN; MIXTURES; NITROGEN; ORGANIC COMPOUNDS; SPECTROSCOPY; TEMPERATURE;

ELECTRON TEMPERATURE; ELECTRON-IMPACT CROSS SECTIONS; LANGMUIR PROBES; OPTICAL EMISSION SPECTROSCOPY; RADICAL NUMBER DENSITIES; TETRAMETHYLSILANE;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0036674166     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/11/3/318     Document Type: Article

References (33)

1. The behaviour of free molecule cylindrical langmuir probes in supersonic flows and their application to the study of the blunt body stagnation layer
2. y: H-Schichten
3. Spectral intensities
4. Atomic transition probabilities
5. Laser-induzierte Fluoreszenzmessungen und Emissionsspektroskopie am ECR-Methanplasma
6. Minimum ionic kinetic energy for a stable sheath
7. Festkörperzerstäubung durch Ionenbeschuss