Comparative analysis of characteristics of Si, Mg, and undoped GaN

Journal of Crystal Growth

Volumn 210, Issue 4, 2000, Pages 505-510

  Kim, K S ^a   Oh, C S ^a   Lee, W H ^a   Lee, K J ^a   Yang, G M ^a   Hong, C H ^a   Suh, E K ^a   Lim, K Y ^a   Lee, H J ^a   Byun, D J ^b  

^a C   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE; GALLIUM NITRIDE FILMS; HALL MOBILITIES; THREADING DISLOCATION; UNDOPED GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033877150     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00739-3     Document Type: Article

References (21)

1. Nakamura S., Mukai T., Senoh M. Jpn. J. Appl. Phys. 30:1991;L1998.
2. Nakamura S., Mukai T., Senoh M., Iwasa N. Jpn. J. Appl. Phys. 31:1992;L139.
3. M.G. Cheong, K.S. Kim, C.S. Oh, H.K. Cho, G.M. Yang, C.-H. Hong, K.Y. Lim, E.-K. Suh, H.J. Lee, Semicond. Sci. Tech., submitted for publication.
4. G.M. Yang, J.-H. Kim, K.S. Kim, K.J. Lee, S.C. Choi, J.Y. Choi, C.S. Oh, C.-H. Hong, K.Y. Lim, H.J. Lee, Second International Symposium Proceedings on Blue Laser and Light Emitting Diodes, 1998, p. 166.
5. Kim K.S., Oh C.S., Lee K.J., Yang G.M., Hong C.-H., Lim K.Y., Yoshikawa A., Lee H.J. J. Appl. Phys. 85:1999;8441.
6. Keller S., Kapolnek D., Keller B.P., Wu Y., Heying B., Speck J.S., Mishra U.K., DenBaars S.P. Jpn. J. Appl. Phys. 35:1996;L285.
7. Kuznia J.N., Khan M.A., Olson D.T. J. Appl. Phys. 73:1993;4700.
8. Lin C.F., Chi G.C., Feng M.S., Guo J.D., Guo J.S., Tsang J.S., Hong J.M. Appl. Phys. Lett. 68:1996;3758.
9. Sugiura L., Itaya K., Nishio J., Fujimoto H., Kokubun Y. J. Appl. Phys. 82:1997;4877.
10. Wickenden A.E., Wickenden D.K., Kistenmacher T.J. J. Appl. Phys. 75:1994;5367.
11. Han J., Ng T.-B., Biefeld R.M., Crawford M.H., Follstaedt D.M. Appl. Phys. Lett. 71:1997;3114.
12. Kim K.S., Yang G.M., Lee H.J. Solid State Electron. 43:1999;1807.
13. Smith M., Lin J.Y., Jiang H.X., Khan A., Chen Q., Salvador A., Botchkarev A., Kim W., Morkoc H. Appl. Phys. Lett. 70:1997;2882.
14. Eckerlin P., Kandler H. Landolt-Bornstein, Numerical Data and Functional Relationships in Science and Technology. Vol. III:1971;Springer, Berlin.
15. Heying B., Wu X.H., Keller S., Li Y., Kapolnek D., Keller B.P., DenBaars S.P., Speck J.S. Appl. Phys. Lett. 68:1996;643.
16. Kim K.S., Yang G.M., Kim J.-H., Lee K.J., Oh C.S., Lim D.H., Hong C.-H., Lim K.Y., Byun D.J., Yoshikawa A., Lee H.J. J. Kor. Phys. Soc. 34:1999;S409.
17. Hansen P.J., Strausser Y.E., Erickson A.N., Tarsa E.J., Kozodoy P., Brazel E.G., Ibbetson J.P., Mishra U., Narayanamurti V., DenBaars S.P., Speck J.S. Appl. Phys. Lett. 72:1998;2247.
18. Kozawa T., Kachi T., Kano H., Taga Y., Hashimoto M., Koide N., Manabe K. J. Appl. Phys. 75:1994;1098.
19. Kim K.S., Yang G.M., Lee H.J. J. Vac. Sci. Technol. A. 16:1998;2663.
20. Kozawa T., Kachi T., Kano H., Nagase H., Koide N., Manabe K. J. Appl. Phys. 77:1995;4389.
21. Sudhir G.S., Peyrot Y., Kruger J., Kim Y., Kockenbrink R., Kisielowski C., Rubin M.D., Weber E.R. Mater. Res. Soc. Symp. Proc. 482:1997;525.