Damage buildup and removal in Ca-ion-implanted GaN

Applied Physics A: Materials Science and Processing

Volumn 70, Issue 1, 2000, Pages 53-57

  Liu, C ^a,b   Schreck, M ^a   Wenzel, A ^a   Mensching, B ^a   Rauschenbach, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ION IMPLANTATION; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STRUCTURE (COMPOSITION); THERMAL EFFECTS; THERMAL EXPANSION; X RAY DIFFRACTION ANALYSIS;

DAMAGE BUILDUP; GALLIUM NITRIDE; IMPLANTATION DOSE; LATTICE EXPANSION; RUTHERFORD BACKSCATTERING CHANNELING; SHALLOW ACCEPTOR;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033702614     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050010     Document Type: Article

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