Modeling and optimization of oxynitride gate dielectrics formation by remote plasma nitridation of silicon dioxide

Journal of the Electrochemical Society

Volumn 146, Issue 3, 1999, Pages 1111-1116

  Kapila, Dixit ^a   Hattangady, Sunil ^a   Douglas, Monte ^a   Kraft, Robert ^a   Gribelyuk, Michael ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOS DEVICES; NITRIDING; NITROGEN; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; TRANSCONDUCTANCE;

RESPONSE SURFACE MODEL;

DIELECTRIC DEVICES;

EID: 0033096666     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391730     Document Type: Article

References (22)