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Journal of Crystal Growth

Volumn 242, Issue 1-2, 2002, Pages 132-140

Study of narrow InGaP/(In)GaAs quantum wells

(5) Kudela R a Kucera M a Novak J a Ferrari, C b Pelosi, C b

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

b CNR (Italy)

Author keywords

A1. Interfaces; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells

Indexed keywords

COMPOSITION; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

INTERFACE QUALITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036643679 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01413-6 Document Type: Article

Times cited : (8)

References (24)

1
- 51149206925
- (1987) Appl. Phys. Lett. , vol.50 , pp. 673
- Gomyo, A.¹ Suzuki, T.² Kobayashi, K.³ Kawata, S.⁴ Hino, I.⁵

2
- 0001692471
- (1988) Phys. Rev. B , vol.38 , pp. 6338
- Bernard, J.E.¹ Ferreira, L.G.² Wei, S.-H.³ Zunger, A.⁴

3
- 0024765882
- (1989) J. Crystal Growth , vol.98 , pp. 108
- Stringfellow, G.B.¹

4
- 0029219136
- (1995) J. Crystal Growth , vol.146 , pp. 558
- Su, L.C.¹ Ho, I.H.² Stringfellow, G.B.³

5
- 0001432466
- (1994) J. Appl. Phys. , vol.75 , pp. 5110
- Kurtz, S.R.¹ Olson, J.M.² Arent, D.J.³ Bode, M.H.⁴ Bertness, K.A.⁵

6
- 0030105725
- (1996) J. Appl. Phys. , vol.79 , pp. 2633
- Ernst, P.¹ Geng, C.² Hahn, G.³ Scholz, F.⁴ Schweizer, H.⁵ Phillipp, F.⁶ Marcarenhas, A.⁷

7
- 0000249064
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2852
- Froyen, S.¹ Zunger, A.² Mascarenhas, A.³

8
- 0026943936
- (1992) J. Crystal Growth , vol.124 , pp. 199
- Guimaraes, F.E.G.¹ Elsner, B.² Westphalen, R.³ Spangenberg, B.⁴ Geelen, H.J.⁵ Balk, P.⁶

9
- 0026945570
- (1992) J. Crystal Growth , vol.124 , pp. 576
- Bhat, R.¹ Koza, M.A.² Brasil, M.J.S.P.³ Nahory, R.E.⁴ Palmstrom, C.J.⁵ Wilkens, B.J.⁶

10
- 21544457576
- (1995) J. Appl. Phys. , vol.77 , pp. 1154
- Liu, Q.¹ Derksen, S.² Lindner, A.³ Scheffer, F.⁴ Prost, W.⁵ Tegude, F.-J.⁶

11
- 0002000381
- (1996) J. Appl. Phys. , vol.79 , pp. 305
- Liu, Q.¹ Derksen, S.² Prost, W.³ Lindner, A.⁴ Tegude, F.-J.⁵

12
- 0000800389
- (1997) J. Appl. Phys. , vol.81 , pp. 771
- Uchida, K.¹ Arai, T.² Matsumoto, K.³

13
- 0032597752
- (1999) J. Crystal Growth , vol.206 , pp. 166
- Chiu, S.W.¹ Lee, C.P.² Hong, J.M.³ Chen, C.W.⁴ Tsou, Y.⁵

14
- 0034507846
- (2000) J. Crystal Growth , vol.221 , pp. 509
- Sharma, T.¹ Arora, B.M.² Gokhale, M.R.³ Rajgopalan, S.⁴

15
- 0009433961
- (2000) J. Crystal Growth , vol.213 , pp. 241
- Sharma, T.¹ Gokhale, M.R.² Arora, B.M.³

16
- 0033273243
- (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 2524
- Fukai, Y.K.¹ Hyuga, F.² Nittono, T.³ Watanabe, K.⁴

17
- 0342521562
- (2000) J. Crystal Growth , vol.212 , pp. 21
- Kúdela, R.¹ Kučera, M.² Olejníková, B.³ Eliáš, P.⁴ Hasenohrl, S.⁵ Novák, J.⁶

18
- 0000966251
- (1992) Appl. Phys. Lett. , vol.61 , pp. 1703
- He, X.¹ Razeghi, M.²

19
- 0034497057
- (2000) J. Crystal Growth , vol.221 , pp. 515
- Tanaka, T.¹ Takano, K.² Tsuchyia, T.³ Sakaguchi, H.⁴

20
- 0026241583
- (1991) Jpn. J. Appl. Phys. , vol.30
- Kobayashi, N.¹ Kobayashi, Y.²

21
- 0001238438
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1998
- Jonsson, J.¹ Reinhardt, F.² Zorn, M.³ Ploska, K.⁴ Richter, W.⁵ Rumberg, J.⁶

22
- 0343774149
- (2000) J. Crystal Growth , vol.221 , pp. 129
- Féron, O.¹ Nakano, Y.² Shimogaki, Y.³

23
- 0009359644
- (1981) Inst. Phys. Conf. Ser. , vol.56 , pp. 115
- De Cremoux, B.¹ Hirtz, P.² Ricciardi, J.³

24
- 0021142114
- (1984) NEC Res. Dev. , vol.72 , pp. 1
- Onabe, K.¹

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