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Journal of Crystal Growth

Volumn 213, Issue 3-4, 2000, Pages 241-249

Long-wavelength photoluminescence from InGaP/GaAs heterointerfaces grown by metal organic vapour-phase epitaxy

(3) Sharma, T K a Gokhale, M R b Arora, B M b

a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY (India)

b Tata Institute (India)

Author keywords

InGaP GaAs; Interfacial layer; MOVPE; PL and PLE; Switching sequence

Indexed keywords

EID: 0009433961 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00382-1 Document Type: Article

Times cited : (19)

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