Formation of interfaces in InGaP/GaAs/InGaP quantum wells

Journal of Crystal Growth

Volumn 212, Issue 1, 2000, Pages 21-28

  Kudela R ^a   Kucera M ^a   Olejnikova B ^a   Elias P ^a   Hasenohrl S ^a   Novak J ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

QUATERNARY INTERLAYERS (IL); SWITCHING SEQUENCES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0342521562     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00229-3     Document Type: Article

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